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M58LW064C-110N6
M58LW064C 64 Mbit (4Mb x 16, Uniform Block, Burst) 3V Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ WIDE x16 DATA BUS for HIGH BANDWIDTH SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8 to VDD for I/O Buffers SYNCHRONOUS/ASYNCHRONOUS READ – Synchronous Burst read – Asynchronous Random Read – Asynchronous Address Latch Controlled Read – Page Read ACCESS TIME – Synchronous Burst Read up to 56MHz – Asynchronous Page Mode Read 110/ 25ns – Random Read 110ns PROGRAMMING TIME – 16 Word Write Buffer – 12µs Word effective programming time 64 UNIFORM 64 KWord MEMORY BLOCKS ENHANCED SECURITY – Block Protection/ Unprotection – Smart Protection: irreversible block locking system – VPEN signal for Program Erase Enable – 128 bit Protection Register with 64 bit Unique Code in OTP area PROGRAM and ERASE SUSPEND COMMON FLASH INTERFACE 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code M58LW064C : 8820h PACKAGES – Compliant with Lead-Free Soldering Processes – Lead-Free Versions August 2004 Figure 1. Packages TSOP56 (N) 14 x 20 mm TBGA TBGA64 (ZA) 10 x 13 mm 1/61
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