IPB79CN10N G IPD78CN10N G
IPI80CN10N G IPP80CN10N G
OptiMOS™2 Power-Transistor
Product Summary
Features
VDS
78
mW
ID
• Excellent gate charge x R DS(on) product (FOM)
V
RDS(on),max (TO252)
• N-channel, normal level
100
13
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB79CN10N G
IPD78CN10N G
IPI80CN10N G
IPP80CN10N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
Marking
79CN10N
78CN10N
80CN10N
80CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
13
T C=100 °C
Unit
9
A
Pulsed drain current2)
I D,pulse
T C=25 °C
52
Avalanche energy, single pulse
E AS
I D=13 A, R GS=25 W
17
mJ
Gate source voltage3)
V GS
±20
V
Power dissipation
P tot
31
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
55/175/56
J-STD20 and JESD22
2)
see figure 3
3)
Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.091
page 1
2013-07-25
