DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36P06KDG
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP36P06KDG-E1-AY
NP36P06KDG-E2-AY
PACKAGE
Pure Sn (Tin)
Note
PACKING
Tape 800 p/reel
TO-263 (MP-25ZK)
Note
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
(TO-263)
• Super low on-state resistance
RDS(on)1 = 29.5 mΩ MAX. (VGS = −10 V, ID = −18 A)
RDS(on)2 = 37.5 mΩ MAX. (VGS = −4.5 V, ID = −18 A)
• Low input capacitance
Ciss = 3100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m36
A
ID(pulse)
m108
A
56
W
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Storage Temperature
Single Avalanche Current
Note2
IAS
23
A
Single Avalanche Energy
Note2
EAS
54
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
2.68
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18687EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2007
