DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3582
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from
VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an
our proprietary new fabrication technique.
FEATURES
• Low noise : NF = 1.2 dB TYP. @ VCE = 8 V, IC = 7 mA, f = 1 GHz
• High gain : Ga = 12 dB TYP. @ f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3582
500 pcs (Non reel)
• 18 mm wide radial taping
2SC3582-T
2.5 kpcs/box (Box type)
• Supplying paper tape with in a box
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 500 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
°
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
IC
65
mA
600
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10210EJ01V0DS (1st edition)
(Previous No. P10359EJ2V1DS00)
Date Published May 2003 CP(K)
Printed in Japan
The mark • shows major revised points.
© NEC Compound Semiconductor Devices 1984, 2003
