This product complies with the RoHS Directive (EU 2002/95/EC).
Phototransistors
PNZ107 (PN107)
Silicon planar type
For optical control systems
Features
M
Di ain
sc te
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ue e/
d
High sensitivity: IL = 5 mA (min.)
Narrow directivity characteristics for effective use of light input
Fast response: tr = 5 μs (typ.)
TO-18 standard type package
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Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-collector voltage (Base open)
VECO
3
V
IC
30
mA
PC
150
mW
Topr
–25 to +85
°C
Tstg
–30 to +100
°C
Collector current
Collector power dissipation *
Operating ambient temperature
Storage temperature
Note) *: The rate of electric power reduction is 1.5 mW/°C above Ta = 25°C.
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Photocurrent *1
IL
Collector-emitter cutoff current (Base open)
Collector-emitter saturation voltage *1
int
tr
tf
Unit
15
5
Max
mA
VCE = 10 V
0.05
2.0
µA
IL = 1 mA, L = 500 lx
0.3
0.6
V
VCE = 10 V
900
nm
10
°
5
µs
6
µs
VCC = 10 V, IL = 5 mA, RL = 100 W
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
This device is designed by disregarding radiation.
*1:Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
Ma
Note) 1.
2.
3.
4.
en
Fall time *2
θ
Typ
The angle when the photocurrent is
halved
ue
on
tin
isc
ce
/D
an
Rise time *2
ICEO
λPD
Half-power angle
Min
VCE = 10 V, L = 100 lx
VCE(sat)
Peak sensitivity wavelength
Conditions
Sig. in
50 Ω
VCC
RL
(Input pulse)
90%
10%
Sig. out (Output pulse)
tr
tr : Rise time
tf : Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: October 2008
SHE00007CED
1