Low Capacitance, Low Charge Injection,
±15 V/+12 V iCMOS® Dual SPST Switches
ADG1221/ADG1222/ADG1223
FEATURES
FUNCTIONAL BLOCK DIAGRAM
ADG1221
ADG1222
S1
S1
IN1
IN1
D1
D1
D2
IN2
S2
D2
IN2
S2
ADG1223
APPLICATIONS
S1
IN1
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Video signal routing
Communication systems
D1
D2
IN2
S2
06574-001
<0.5 pC charge injection over full signal range
Off capacitance: 2 pF
Off leakage: 20 pA
Supply range: 33 V
On resistance: 120 Ω
Fully specified at ±15 V, +12 V
No VL supply required
3 V logic-compatible inputs
Rail-to-rail operation
10-lead MSOP package
SWITCHES SHOWN FOR A LOGIC 0 INPUT
Figure 1.
GENERAL DESCRIPTION
0.5
0.4
TA = 25ºC
VDD = +15V
VSS = –15V
0.3
0.2
0.1
0
VDD = 12V
VSS = 0V
–0.1
–0.2
–0.3
VDD = +5V
VSS = –5V
–0.4
The ADG1221/ADG1222/ADG1223 contain two independent
single-pole/single-throw (SPST) switches. The ADG1221 and
ADG1222 differ only in that the digital control logic is inverted.
The ADG1221 switches are turned on with Logic 1 on the appropriate control input, and Logic 0 is required for the
–0.5
–15
–10
–5
06574-041
The ultralow capacitance and exceptionally low charge injection
of these switches make them ideal solutions for data acquisition
and sample-and-hold applications, where low glitch and fast
settling are required. Figure 2 shows that there is minimum
charge injection over the full signal range of the device.
ADG1222. The ADG1223 has one switch with digital control
logic similar to that of the ADG1221; the logic is inverted on
the other switch. The ADG1223 exhibits break-before-make
switching action for use in multiplexer applications. Each
switch conducts equally well in both directions when on and
has an input signal range that extends to the supplies. In the off
condition, signal levels up to the supplies are blocked.
CHARGE INJECTION (pC)
The ADG1221/ADG1222/ADG1223 are monolithic, complementary metal-oxide semiconductor (CMOS) devices containing
four independently selectable switches designed on an iCMOS
(industrial CMOS) process. iCMOS is a modular manufacturing
process combining high voltage CMOS and bipolar technologies.
It enables the development of a wide range of high performance
analog ICs, capable of 33 V operation, in a footprint that no
previous generation of high voltage parts has been able to achieve.
Unlike analog ICs using conventional CMOS processes, iCMOS
components can tolerate high supply voltages while providing
increased performance, dramatically lower power consumption,
and reduced package size.
0
5
10
15
INPUT VOLTAGE (V)
Figure 2. Charge Injection vs. Input Voltage
Rev. A
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