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NTGD1100LT1G
NTGD1100L, STGD1100L Power MOSFET 8 V, ±3.3 A, Load Switch with Level−Shift, P−Channel, TSOP−6 The NTGD1100L integrates a P and N−Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P−Channel device is specifically designed as a load switch using ON Semiconductor state−of−the−art trench technology. The N−Channel, with an external resistor (R1), functions as a level−shift to drive the P−Channel. The N−Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100L operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF www.onsemi.com V(BR)DSS RDS(on) TYP 8.0 V ±3.3 A 55 mW @ −2.5 V 80 mW @ −1.8 V SIMPLIFIED SCHEMATIC 4 2,3 Q2 Features • • • • • • • ID MAX 40 mW @ −4.5 V Extremely Low RDS(on) Load Switch MOSFET Level Shift MOSFET is ESD Protected Low Profile, Small Footprint Package VIN Range 1.8 to 8.0 V ON/OFF Range 1.5 to 8.0 V ESD Rating of 2000 V These Devices are Pb−Free and are RoHS Compliant 6 Q1 5 1 MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol ON/OFF Voltage (VGS, N−Ch) Continuous Load Current Steady (Note 1) State TA = 25°C Power Dissipation (Note 1) TA = 25°C Steady State Pulsed Load Current 8.0 V 8.0 V IL ±3.3 A ±2.4 TA = 85°C PD TA = 85°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) ESD Rating, MIL−STD−883D HBM (100 pF, 1.5 kW) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) D1/G2 6 Unit VON/OFF Input Voltage (VDSS, P−Ch) Value VIN Rating 1 TSOP−6 CASE 318G STYLE 11 0.43 ILM ±10 A 1 S1 TJ, TSTG −55 to 150 °C IS −1.0 A ESD 2.0 260 °C 2 3 D2 D2 = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. kV TL TZ M G S2 4 TZ M G G W 0.83 G1 5 ORDERING INFORMATION Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). Package Shipping† NTGD1100LT1G TSOP−6 3000 / Tape & Reel (Pb−Free) STGD1100LT1G TSOP−6 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 November, 2015 − Rev. 11 1 Publication Order Number: NTGD1100L/D
ONS
ON Semiconductor
U.S.A
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