M29W256GH
M29W256GL
256-Mbit (32 Mbit x8 or 16 Mbit x16, page, uniform block)
3 V supply flash memory
Features
Supply voltage
– VCC = 2.7 to 3.6 V for program, erase, read
– VCCQ = 1.65 to 3.6 V for I/O buffers
– VPPH = 12 V for fast program (optional)
Asynchronous random/page read
– Page size: 8 words or 16 bytes
– Page access: 25, 30 ns
– Random access: 60 (only available upon
customer request) or 70, 80 ns
TBGA64 (ZA)
10 x 13 mm
– Faster block and chip erase
Enhanced buffered program commands
– 256 words
VPP/WP pin for fast program and write: protects
first or last block regardless of block protection
settings
Programming time
– 16 μs per byte/word typical
– Chip program time: 10 s with VPPH and
16 s without VPPH
Software protection:
– Volatile protection
– Non-volatile protection
– Password protection
Memory organization
– M29W256G: 256 main blocks,
128 Kbytes/64 Kwords each
Common flash interface
– 64-bit security code
Program/erase controller
– Embedded byte/word program algorithms
Program/ erase suspend and resume
– Read from any block during program
suspend
– Read and program another block during
erase suspend
128-word extended memory block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and automatic standby
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer/Enhanced Buffer Program commands
– Faster production/batch programming
Minimum 100,000 program/erase cycles per
block
RoHS compliant packages
Automotive device grade: Temperature -40 °C
to 85 °C (Automotive grade certified)
Device summary
Root part number
Device code
M29W256GH / M29W256GL
May 2009
LBGA (ZS)
11 x 13 mm
TSOP56 (N)
14 x 20 mm
BGA
Fast program commands
– 32 words (64-byte write buffer)
Table 1.
BGA
227Eh + 2222h + 2201
208012-03
1/97
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