This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA1739
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938
(0.425)
Unit: mm
M
Di ain
sc te
on na
tin nc
ue e/
d
0.3+0.1
–0.0
0.15+0.10
–0.05
2.1±0.1
2
0.2±0.1
1
0.9+0.2
–0.1
• High speed switching
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
5˚
1.25±0.10
0.9±0.1
ue
pl d in
an c
se
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
t n l
ht low disc dis ena ten low
tp in o co n an in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ty
ni bo yp p
c. u e e
uc
ne t l
d
tl
ife
t/s ate
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
3
■ Features
(0.65) (0.65)
1.3±0.1
■ Absolute Maximum Ratings Ta = 25°C
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Rating
Unit
VCBO
−15
V
VCEO
−15
V
VEBO
−4
V
IC
Storage temperature
mW
150
°C
Tstg
Junction temperature
150
−55 to +150
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
mA
Tj
Collector power dissipation
mA
−100
PC
Peak collector current
−50
ICP
Collector current
0 to 0.1
Parameter
2.0±0.2
10˚
°C
Marking Symbol: AX
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
ICBO
VCB = −8 V, IE = 0
− 0.1
µA
Emitter-base cutoff current (Collector open)
IEBO
VCE = −3 V, IC = 0
− 0.1
µA
150
VCE = −1 V, IC = −10 mA
50
hFE2
VCE = −1 V, IC = −1 mA
30
VCE(sat)
IC = −10 mA, IB = −1 mA
hFE1
co
Forward current transfer ratio
nt
in
Collector-base cutoff current (Emitter open)
/D
is
Collector-emitter saturation voltage
VCB = −10 V, IE = 10 mA, f = 200 MHz
fT
ce
Transition frequency
*
− 0.1
800
− 0.2
V
1 500
MHz
M
ai
nt
en
an
Turn-off time
1
pF
Refer to the switching time
12
ns
measurement circuit
20
ns
19
ns
tstg
Pl
ea
Storage time
VCB = −5 V, IE = 0, f = 1 MHz
ton
Turn-on time
Cob
toff
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
No-rank
hFE1
50 to 120
90 to 150
50 to 150
Marking symbol
AXQ
AXR
AX
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
SJC00027BED
1