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KSP42TA
KSP42 / KSP43 NPN Epitaxial Silicon Transistor Features • Collector-Emitter Voltage: VCEO = KSP42: 300 V KSP43: 200 V • Collector Dissipation: PC (max.) = 625 mW TO-92 12 3 Straight Lead Bulk Packing 1 2 1. Emitter 2. Base 3. Collector 3 Bent Lead Tape & Reel Ammo Packing Ordering Information Part Number Top Mark Package Packing Method KSP42BU KSP42 TO-92 3L Bulk KSP42TA KSP42 TO-92 3L Ammo KSP43BU KSP43 TO-92 3L Bulk KSP43TA KSP43 TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Value KSP42 300 KSP43 200 KSP42 300 KSP43 200 Unit V V 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C © 2002 Fairchild Semiconductor Corporation KSP42 / KSP43 Rev. 1.4 www.fairchildsemi.com KSP42 / KSP43 — NPN Epitaxial Silicon Transistor September 2015
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
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