SEMICONDUCTOR
KTA2012E
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
FEATURES
・A Collector Current is Large.
・Collector Saturation Voltage is low.
: VCE(sat)≤-250mV at IC=-200mA/IB=-10mA.
・Complementary to KTC4072E.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-15
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-6
V
IC
-500
mA
-1
A
Collector Current
ICP *
Collector Power Dissipation
PC
100
mW
Junction Temperature
Tj
150
℃
Tstg
-55～150
℃
Storage Temperature Range
* Single pulse Pw=1mS.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
ICBO
Collector Cut-off Current
TEST CONDITION
VCB=-15V, IE=0
MIN.
TYP.
MAX.
UNIT
-
-
-100
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=-10μ
A
-15
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA
-12
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=-10μ
A
-6
-
-
V
270
-
680
-
IC=-200mA, IB=-10mA
-
-100
-250
mV
VCE=-2V, IC=-10mA, fT=100MHz
-
260
-
MHz
VCB=-10V, IE=0, f=1MHz
-
6.5
-
pF
hFE
DC Current Gain
Collector-Emitter Saturation Voltage
fT
Transition Frequency
Collector Output Capacitance
2014. 3. 31
VCE(sat)
Revision No : 2
Cob
VCE=-2V, IC=-10mA
1/3
