PD- 95621
SMPS MOSFET
IRFB61N15DPbF
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
l Motor Control
l Uninterrutible Power Supplies
l Lead-Free
l
VDSS
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
ID
0.032Ω
150V
RDS(on) max
60A
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
Units
60
42
250
2.4
330
2.2
± 30
3.7
-55 to + 175
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Notes
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
through
www.irf.com
Typ.
Max.
Units
–––
0.50
–––
0.45
–––
62
°C/W
are on page 8
1
8/2/04