JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
TO – 92S
2SC3330
TRANSISTOR (NPN)
1. EMITTER
FEATURES
Large Current Capacity and Wide ASO
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
200
mA
PC
Collector Power Dissipation
300
mW
Thermal Resistance From Junction To Ambient
417
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= 10µA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA,IC=0
6
V
Collector cut-off current
ICBO
VCB=40V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
hFE(1)
VCE=6V, IC=1mA
100
hFE(2)
VCE=6V, IC=0.1mA
70
DC current gain
800
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA,IB=10mA
1
V
Collector output capacitance
Cob
fT
Transition frequency
3
VCE=6V,IC=10mA
pF
200
VCB=6V,IE=0, f=1MHz
MHz
CLASSIFICATION OF hFE(1)
RANK
R
S
T
U
V
RANGE
100-200
140-280
200-400
280-560
400-800
A,Dec,2010