NEC's MEDIUM POWER
NPN SILICON HIGH FREQUENCY NE677M04
TRANSISTOR
FEATURES
HIGH GAIN BANDWIDTH:
fT = 15 GHz
HIGH OUTPUT POWER:
P-1dB = 15 dBm at 1.8 GHz
+0.40-0.05
NEC's NE677M04 is housed in NEC's new low profile/flat lead
style "M04" package
2
1
1.25
0.650.65
+0.01
+0.30-0.05 (leads 1, 3 and ,4)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
+0.1
0.59±0.05
2.0±0.1
NEC's NE677M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 15 GHz, the NE677M04
is usable in applications from 100 MHz to 3 GHz. The NE677M04
provides P1dB of 15 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
R54
DESCRIPTION
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
PART NUMBER
PACKAGE OUTLINE
EIAJ3 REGISTRATION NUMBER
SYMBOLS
PARAMETERS AND CONDITIONS
+0.11-0.05
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
3
•
2.05±0.1
1.25±0.1
1.30
HIGH LINEAR GAIN:
GL = 15.5 dB at 1.8 GHz
0.650.65
•
4
•
+0.30
•
NE677M04
M04
2SC5751
UNITS
MIN
TYP
MAX
DC
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
100
Current1
hFE
DC
P1dB
Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 8 mA,
f = 1.8 GHz, Pin = 1 dBm
RF
GL
Gain at VCE = 3 V, IC = 20 mA
Linear Gain at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz, Pin = -10 dBm
Maximum Available Gain4 at VCE = 3 V, IC = 20 mA, f = 2 GHz
MAG
|S21E|2
75
120
dBm
dB
150
15.0
15.5
dBm
16.0
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
ηc
Collector Efficiency at VCE = 2.8 V, ICQ = 8 mA, f = 1.8 GHz,
Pin = 1 dBm
%
50
NF
Noise Figure at VCE = 3 V, IC = 5 mA, f = 2 GHz, Zs =ZOPT
dB
1.7
fT
Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz
Cre
10.0
13.5
GHz
15
pF
0.22
2.5
0.50
Notes:
1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan
|S21|
4. MAG =
|S12|
(K ±
K 2- 1
).
California Eastern Laboratories