Features
• Single 2.5V - 3.6V or 2.7V - 3.6V Supply
• Atmel RapidS Serial Interface: 66MHz Maximum Clock Frequency
– SPI Compatible Modes 0 and 3
• User Configurable Page Size
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– 512-Bytes per Page
– 528-Bytes per Page
– Page Size Can Be Factory Pre-configured for 512-Bytes
Page Program Operation
– Intelligent Programming Operation
– 4,096 Pages (512-/528-Bytes/Page) Main Memory
Flexible Erase Options
– Page Erase (512-Bytes)
– Block Erase (4-Kbytes)
– Sector Erase (128-Kbytes)
– Chip Erase (16-Mbits)
Two SRAM Data Buffers (512-/528-Bytes)
– Allows Receiving of Data while Reprogramming the Flash Array
Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
Low-power Dissipation
– 7mA Active Read Current Typical
– 25µA Standby Current Typical
– 15µA Deep Power Down Typical
Hardware and Software Data Protection Features
– Individual Sector
Sector Lockdown for Secure Code and Data Storage
– Individual Sector
Security: 128-byte Security Register
– 64-byte User Programmable Space
– Unique 64-byte Device Identifier
JEDEC Standard Manufacturer and Device ID Read
100,000 Program/Erase Cycles Per Page Minimum
Data Retention – 20 Years
Industrial Temperature Range
Green (Pb/Halide-free/RoHS Compliant) Packaging Options
1.
16-megabit
2.5V or 2.7V
DataFlash
Atmel AT45DB161D
Description
The Atmel® AT45DB161D is a 2.5V or 2.7V, serial-interface sequential access Flash
memory ideally suited for a wide variety of digital voice-, image-, program code- and
data-storage applications. The AT45DB161D supports Atmel RapidS™ serial interface
for applications requiring very high speed operations. RapidS serial interface is SPI
compatible for frequencies up to 66MHz. Its 17,301,504-bits of memory are organized
as 4,096 pages of 512-bytes or 528-bytes each. In addition to the main memory, the
AT45DB161D also contains two SRAM buffers of 512-/528-bytes each. The buffers
allow the receiving of data while a page in the main Memory is being reprogrammed,
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write
3500N–DFLASH–05/10
