DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3481
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The 2SK3481 is N-channel MOS Field Effect Transistor
PART NUMBER
PACKAGE
2SK3481
TO-220AB
2SK3481-S
TO-262
2SK3481-ZJ
TO-263
2SK3481-Z
TO-220SMDNote
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 50 mΩ MAX. (VGS = 10 V, ID = 15 A)
Note TO-220SMD package is produced only
RDS(on)2 = 58 mΩ MAX. (VGS = 4.5 V, ID = 15 A)
in Japan.
• Low Ciss: Ciss = 2300 pF TYP.
(TO-220AB)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
= 0 V)
VGSS
±20
V
ID(DC)
±30
A
ID(pulse)
±60
A
Total Power Dissipation (TC = 25°C)
PT1
56
W
= 25°C)
PT2
1.5
W
Tch
150
°C
Gate to Source Voltage
(VDS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation
(TA
Channel Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
26
A
Single Avalanche Energy
Note2
EAS
68
(TO-262)
mJ
Storage Temperature
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
(TO-263, TO-220SMD)
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
2.23
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15063EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
©
2002
