HiPerFETTM
Power MOSFETs
IXFX 120N20
IXFK 120N20
VDSS
ID25
RDS(on)
Single MOSFET Die
= 200 V
= 120 A
=
17 mΩ
Ω
trr ≤ 250 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
200
200
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID104
IDM
IAR
TC
TC
TC
TC
120
76
480
120
A
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
64
3
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
15
V/ns
PD
TC = 25°C
560
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
PLUS 247TM (IXFX)
= 25°C (MOSFET chip capability)
= 104°C (External lead capability)
= 25°C, pulse width limited by TJM
= 25°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-264
0.9/6 Nm/b.in.
PLUS 247
TO-264
6
10
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
200
V
VGS(th)
VDS = VGS, ID = 8mA
2.0
4.0 V
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
G
(TAB)
D
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
±200 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
17 mΩ
Advantages
• PLUS 247TM package for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2002 IXYS All rights reserved
98636-B (9/02)
