FDS8858CZ
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement
mode power
MOSFETs are produced using Fairchild Semiconductor’s
Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
advanced PowerTrench process that has been especially
Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
tailored to minimize on-state
resistance
and yet maintain
superior switching performance.
Q2: P-Channel
Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
These devices are well suited for low voltage and battery
Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
powered applications where low in-line power loss and fast
switching are required.
High power and handing capability in a widely used surface
mount package
Applications
Fast switching speed
Inverter
Synchronous Buck
D2
D2
D2
D2
D1
S2
2
G1
1
8
G2
3
7
4
S1
6
D1
Q2
5
D1
D1
SO-8
S2
Pin 1
S1
G2
G1
Q1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
Q1
30
Single Pulse Avalanche Energy
EAS
(Note 3)
Power Dissipation for Dual Operation
PD
V
-7.3
20
- Pulsed
±25
8.6
TA = 25°C
Units
V
±20
- Continuous
Q2
-30
-20
50
11
mJ
2.0
TA = 25°C
(Note 1a)
1.6
TA = 25°C
Power Dissipation for Single Operation
TJ, TSTG
A
(Note 1c)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
40
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS8858CZ
Device
FDS8858CZ
©2011 Fairchild Semiconductor Corporation
FDS8858CZ Rev.C
Package
SO-8
1
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
October 2011
