CMS15
TOSHIBA Schottky Barrier Diode
CMS15
Switching Mode Power Supply Applications
(Output voltage: ≤12 V)
Unit: mm
DC/DC Converter Applications
•
•
•
•
Forward voltage: VFM = 0.58 V (max)
Average forward current: IF (AV) = 3.0 A
Repetitive peak reverse voltage: VRRM = 60 V
Suitable for compact assembly due to small surface-mount package
“M−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Repetitive peak reverse voltage
60
IF (AV)
Unit
V
VRRM
Average forward current
Rating
Non-repetitive peak surge current
3.0 (Note 1)
A
IFSM
Tj
Storage temperature range
A
−40~150
°C
Tstg
Junction temperature
60 (50Hz)
−40~150
°C
Note 1: Tℓ = 95°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
Board thickness: 0.64 t
Rectangular waveform (α = 180°), VR = 30 V
JEDEC
―
JEITA
―
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
Weight: 0.023 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
⎯
VFM (1)
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
0.43
⎯
0.49
⎯
IFM = 3.0 A (pulse test)
⎯
0.55
0.58
IRRM (1)
VRRM = 5 V (pulse test)
⎯
1.0
⎯
IRRM (2)
VRRM = 60 V (pulse test)
⎯
25
300
VR = 10 V, f = 1.0 MHz
⎯
102
⎯
⎯
⎯
60
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
⎯
⎯
135
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 t)
Junction capacitance
⎯
IFM = 2.0 A (pulse test)
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 t)
Peak repetitive reverse current
IFM = 1.0 A (pulse test)
VFM (2)
VFM (3)
Peak forward voltage
⎯
⎯
210
⎯
⎯
16
Unit
Cj
Rth (j-a)
⎯
Rth (j-ℓ)
1
V
μA
pF
°C/W
°C/W
2006-11-13
