SMPS IGBT
PD - 95330A
IRGP50B60PD1PbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
C
Applications
•
•
•
•
•
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Lead-Free
E
Features
•
•
•
•
•
•
•
Equivalent MOSFET
Parameters
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
G
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
n-channel
G
Benefits
• Parallel Operation for Higher Current Applications
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150kHz
C
E
TO-247AC
Absolute Maximum Ratings
Max.
Units
VCES
Collector-to-Emitter Voltage
Parameter
600
V
IC @ TC = 25°C
Continuous Collector Current
75
IC @ TC = 100°C
Continuous Collector Current
45
ICM
150
ILM
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
IF @ TC = 25°C
Diode Continous Forward Current
40
IF @ TC = 100°C
IFRM
Diode Continous Forward Current
Maximum Repetitive Forward Current
VGE
Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
390
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
d
150
A
15
e
60
156
-55 to +150
Soldering Temperature for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Min.
Typ.
Max.
Units
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Parameter
–––
–––
0.32
°C/W
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
1.7
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
40
Weight
–––
6.0 (0.21)
–––
www.irf.com
g (oz)
1
7/25/08