Preliminary Datasheet
RJK6018DPM
R07DS0131EJ0200
Rev.2.00
Jun 21, 2012
600V - 30A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.2 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
D
1. Gate
2. Drain
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
IDNote4
ID (pulse)Note1
IDR
IDR (pulse)Note1
Note3
IAP
Note3
EAR
Pch Note2
ch-c
Tch
Tstg
Ratings
600
±30
30
90
30
90
Unit
V
V
A
A
A
A
6
1.9
60
2.08
150
–55 to +150
A
mJ
W
C/W
C
C
PW 10 s, duty cycle 1%
Value at Tc = 25C
STch = 25C, Tch 150C
Limited by maximum safe operation area
R07DS0131EJ0200 Rev.2.00
Jun 21, 2012
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