Power transistor (60V, 3A)
2SC5825
Dimensions (Unit : mm)
Features
1) High speed switching.
(Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2072.
CPT3
(SC-63)
Applications
Low frequency amplifier
High speed switching
(1) Base
(2) Collector
(3) Emitter
Each lead has same dimensions
Abbreviated symbol : C5825
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
TL
Code
Basic ordering unit (pieces)
2500
2SC5825
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
Continuous
IC
3
A
Pulsed
ICP
6
A
∗1
1.0
W
∗2
10.0
W
∗3
Tj
150
°C
Tstg
−55 to 150
°C
Parameter
Collector current
Power dissipation
Junction temperature
Range of storage temperature
PC
∗1 Pw=100ms
∗2 Each terminal mounted on a recommended land
∗3 Tc=25°C
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2011.10 - Rev.D
