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MP6901
MP6901 TOSHIBA Power Transistor Module Silicon Epitaxial Type (Six Darlington Power Transistors in One) MP6901 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (6-device operation) • High collector current: IC (DC) = ±4 A (max) • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) : PT = 5 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating NPN PNP Unit Collector-base voltage VCBO 100 −100 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 5 −5 V IC 4 −4 ICP 6 −6 IB 0.4 −0.4 Collector current Continuous base current Collector power dissipation PC (1-device operation) Collector power dissipation Ta = 25°C (6-device operation) Tc = 25°C 3.0 A JEDEC ― JEITA ― TOSHIBA A 2-32B1D Weight: 6.0 g (typ.) W 5.0 W PT 25 Isolation voltage VIsol 150 °C Tstg Storage temperature range V Tj Junction temperature 1000 −55 to 150 °C Array Configuration 12 R1 R2 4 7 3 6 4 2 10 8 9 R1 R2 11 1 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 1 2004-07-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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