FDW2520C
July 2008
FDW2520C
Complementary PowerTrench MOSFET
General Description
Features
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
•
Q1: N-Channel
RDS(ON) = 18 mΩ @ VGS = 4.5 V
RDS(ON) = 28 mΩ @ VGS = 2.5 V
6 A, 20 V.
•
Applications
Q2: P-Channel
–4.4A, 20 V.
• DC/DC conversion
• Power management
RDS(ON) = 35 mΩ @ VGS = –4.5 V
RDS(ON) = 57 mΩ @ VGS = –2.5 V
•
High performance trench technology for extremely
low RDS(ON)
•
Low profile TSSOP-8 package
• Load switch
G2
S2
S2
D2
Q1
Q2
1
2
TSSOP-8
7
3
6
4
G1
S1
S1
D1
8
5
Pin 1
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
VDSS
VGSS
Drain Current
- Continuous
- Pulsed
Power Dissipation
PD
(Note 1a)
Q2
Units
20
Drain-Source Voltage
Gate-Source Voltage
ID
Q1
–20
±12
6
30
±12
–4.4
–30
V
V
1.0
(Note 1b)
TJ, TSTG
(Note 1a)
A
0.6
Operating and Storage Junction Temperature Range
W
–55 to +150
°C
(Note 1a)
125
°C/W
(Note 1b)
208
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
2520C
2008 Fairchild Semiconductor Corporation
Device
FDW2520C
Reel Size
Tape width
Quantity
13’’
12mm
2500 units
FDW2520C Rev C1(W)
