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by MRF158/D
SEMICONDUCTOR TECHNICAL DATA
The RF TMOS Line
Power Field Effect Transistor
MRF158
N–Channel Enhancement Mode
Designed for wideband large–signal amplifier and oscillator applications to
500 MHz.
• Guaranteed 28 Volt, 500 MHz Performance
Output Power = 2.0 Watts
Minimum Gain = 16 dB (Min)
Efficiency = 55% (Typ)
To 500 MHz, 2 W, 28 V
TMOS
BROADBAND
RF POWER FET
• Facilitates Manual Gain Control, ALC and Modulation
Techniques
• 100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
• Excellent Thermal Stability, Ideally Suited for Class A
Operation
D
G
CASE 305A–01, STYLE 2
S
MAXIMUM RATINGS
Symbol
Value
Unit
Drain–Source Voltage
Rating
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
65
Vdc
VGS
±20
Vdc
Drain Current — Continuous
ID
0.5
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
8.0
45
Watts
mW/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
13.2
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 9
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