< Low Noise GaAs HEMT >
MGF4931AM
4pin flat lead package
DESCRIPTION
The MGF4931AM super-low noise InGaAs HEMT (High Electron Mobility
Transistor) is designed for use in S to Ku band amplifiers.
The 4pin flat lead package is small-thin size, and offers high cost
performance.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
NFmin. = 0.60dB (Typ.)
High associated gain
@ f=12GHz
Gs = 11.5dB (Typ.)
Fig.1
APPLICATION
S to Ku band low noise amplifiers
QUALITY GRADE
MITSUBISHI Proprietary
GG
Not to be reproduced or disclosed without
permission by Mitsubishi Electric
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=7.5mA
ORDERING INFORMATION
Tape & reel
15000pcs/reel
RoHS COMPLIANT
MGF4931AM is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
Gate to drain voltage
VGSO
ID
Drain current
PT
Tch
Tstg
Parameter
Gate to source voltage
Ratings
Unit
-4
V
-4
V
IDSS
mA
Total power dissipation
50
mW
Channel temperature
125
C
Storage temperature
-55 to +125
C
ELECTRICAL CHARACTERISTICS
Symbol
(Ta=25C )
Parameter
(Ta=25C )
Test conditions
Limits
Unit
MIN.
TYP.
MAX
Gate to drain breakdown voltage
IG=-10A
-3
--
--
IGSS
Gate to source leakage current
--
--
50
A
IDSS
Saturated drain current
VGS=-2V,VDS=0V
VGS=0V,VDS=2V
10
--
60
mA
VDS=2V,ID=500A
VDS=2V,
-0.1
--
-1.5
V
10.0
11.5
--
dB
--
0.50
0.80
dB
V(BR)GDO
VGS(off)
Gs
Gate to source cut-off voltage
Associated gain
ID=7.5mA,f=12GHz
NFmin. Minimum noise figure
Note: Gs and NFmin. are tested with sampling inspection.
Publication Date : Apr., 2011
1
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