Bulletin I27235 07/06
GA200SA60SP
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
• Lowest conduction losses available
• Fully isolated package ( 2,500 volt AC)
• Very low internal inductance ( 5 nH typ.)
• Industry standard outline
• UL pending
• Totally Lead-Free
VCES = 600V
VCE(on) typ. = 1.10V
G
@VGE = 15V, IC = 100A
E
n-channel
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Max.
Units
600
200
100
400
400
± 20
155
2500
630
250
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
V
A
V
mJ
V
W
°C
Thermal Resistance
Parameter
RθJC
RθCS
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
Max.
–––
0.05
30
0.20
–––
–––
Units
°C/W
gm
1
