PD - 95193A
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
Most Rugged in Industry
Logic-Level Gate Drive
> 6KV ESD Gate Protection
Low Saturation Voltage
High Self-clamped Inductive Switching Energy
Lead-Free
TERMINAL DIAGRAM
Collector
BVCES = 370V min, 430V max
IC @ TC = 110°C = 14A
VCE(on) typ= 1.2V @7A @25°C
IL(min)=11.5A @25°C,L=4.7mH
R1
Gate
R2
Emitter
Description
JEDEC TO-263AB
JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
IRGSL14C40L
IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
Max
Unit
Condition
VCES
Collector-to-Emitter Voltage
Clamped
V
RG = 1K ohm
IC @ TC = 25°C
Continuous Collector Current
20
A
VGE = 5V
IC @ TC = 110°C
Continuous Collector Current
14
A
VGE = 5V
IG
Continuous Gate Current
1
mA
IGp
Peak Gate Current
10
mA tPK = 1ms, f = 100Hz
VGE
Gate-to-Emitter Voltage
PD @ TC = 25°C
Clamped
V
Maximum Power Dissipation
125
W
PD @ T = 110°C Maximum Power Dissipation
54
W
TJ
Operating Junction and
- 40 to 175
°C
TSTG
Storage Temperature Range
- 40 to 175
°C
VESD
Electrostatic Voltage
IL
Self-clamped Inductive Switching Current
6
KV C = 100pF, R = 1.5K ohm
11.5
A
Min
Typ
L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Max
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
40
Unit
1.2
°C/W
(PCB Mounted, Steady State)
ZθJC
www.irf.com
Transient Thermal Impedance, Juction-to-Case (Fig.11)
Page 1
11/19/04
