DEIC421
RF MOSFET DRIVER
20 Ampere Ultrafast RF MOSFET Driver
With Kelvin Connection
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS™ processes
• Latch-Up Protected
• High Peak Output Current: 20A Peak
• Wide Operating Range: 8V to 30V
• Rise and Fall Times of <4ns
• Minimum Pulse Width of 8ns
• High Capacitive Load
Drive Capability: 4nF in <4ns
• Matched Rise and Fall Times
• 32ns Input to Output Delay Time
• Low Output Impedance
• Low Quiescent Supply Current
• Kelvin input ground connection
• Reduced internal inductance
Applications
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Driving RF MOSFETs
Class D or E Switching Amplifier Drivers
Multi-MHz Switch Mode Power Supplies (SMPS)
Pulse Generators
Acoustic Transducer Drivers
Pulsed Laser Diode Drivers
Pulse Transformer Driver
Description
The DEIC421 is a CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class
D, E, and RF applications at up to 45MHz, as well as other applications requiring ultrafast rise and fall times or
short minimum pulse widths. The DEIC421 is an improved version of the DEIC420. The DEIC421 has a Kelvin
ground connection on the input side to allow the use of a common mode choke to avoid problems with ground
bounce. The internal layout of the package has been improved to reduce inductance. The DEIC421 can source
and sink 20A of peak current while producing voltage rise and fall times of less than 4ns, and minimum pulse
widths of 8ns. The input of the driver is compatible with +5V or CMOS and is fully immune to latch up over the
entire operating range. Its features and wide safety margin in operating voltage and power make the DEIC421
unmatched in performance and value.
The DEIC421 is packaged in DEI’s new 7 leaded low inductance RF package. The DEIC421 is a surface-mount
device, and incorporates patented(1) RF layout techniques to minimize stray lead inductances for optimum
switching performance.
(1)
DEI U.S. Patent #4,891,686
Figure 1 - DEIC421 Functional Diagram
VCC
IN
IN GND
OUT
DGND
