Preliminary Data Sheet No. PD60131 revM
IR21531(D)(S) & (PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
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Product Summary
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR21531D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD-FREE
VOFFSET
600V max.
Duty Cycle
50%
Tr/Tp
80/40ns
Vclamp
15.6V
Deadtime (typ.)
0.6 µs
Packages
Description
8 Lead PDIP
8 Lead SOIC
The IR21531(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR21531(S)
IR21531(D)
600V
MAX
600V
MAX
VCC
VCC
VB
HO
HO
RT
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RT
VS
CT
Shutdown
VS
CT
LO
COM
VB
Shutdown
LO
COM
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