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2SA1869-YQ
2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1869 Power Amplifier Applications • Good linearity of hFE • Unit: mm Complementary to 2SC4935 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −3 A Base current IB −0.3 A PC 10 W Tj 150 °C Tstg −55 to 150 °C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range JEDEC JEITA ― SC-67 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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