HOME在庫検索>在庫情報

部品型式

RA07N4047M

製品説明
仕様・特性

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4047M 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4047M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=9.6V, VGG=0V) • Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H46S • ηT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA07N4047M-01 Antistatic tray, 25 modules/tray RA07N4047M MITSUBISHI ELECTRIC 1/9 5 April 2004

ブランド

供給状況

 
Not pic File
お探し製品RA07N4047Mは、当社STAFFが在庫確認を行いメールにて結果を御報告致します。

「見積依頼」をクリックして どうぞお進み下さい。

お支払方法

宅配業者の代金引換又は商品到着後一週間以内の銀行振込となります。


お取引内容はこちら

0.1531059742