2SK4017
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type (U-MOS III)
2SK4017
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
1.5 ± 0.2
Unit: mm
6.5 ± 0.2
5.2 ± 0.2
4-V gate drive
0.6 MAX.
High forward transfer admittance: |Yfs| = 6.0 S (typ.)
1.6
Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
1.1 ± 0.2
2.3
2.3
Rating
Unit
Drain−source voltage
VDSS
60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate−source voltage
VGSS
±20
V
(Note 1)
ID
5
A
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
40.5
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
Channel temperature
Tch
Storage temperature range
Tstg
Drain current
DC
1
0.8 MAX.
2
2.3 ± 0.2
Symbol
0.6 MAX.
5.7
4.1 ± 0.2
0.9
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
5.5 ± 0.2
Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.)
3
0.6 ± 0.15
1.1 MAX.
0.6 ± 0.15
2
1.
2.
GATE
DRAIN
（HEAT SINK）
3. SOURSE
1
3
JEDEC
⎯
mJ
JEITA
⎯
150
°C
TOSHIBA
−55 to 150
°C
Weight: 0.36 g (typ.)
2-7J2B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2008-06-16
