TK20A60U
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (DTMOS II)
TK20A60U
Switching Regulator Applications
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Unit: mm
Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.)
High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
20
Pulse
(Note 1)
IDP
40
Drain power dissipation (Tc = 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
144
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
JEITA
Channel temperature
Tch
150
°C
TOSHIBA
Storage temperature range
Tstg
-55 to 150
°C
Weight : 1.7 g (typ.)
Drain current
A
1: Gate
2: Drain
3: Source
⎯
JEDEC
SC-67
2-10U1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Internal Connection
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
2
Note 1: Ensure that the channel temperature does not exceed 150°C.
1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2010-08-12