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TK20A60UQ

製品説明
仕様・特性

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 20 Pulse (Note 1) IDP 40 Drain power dissipation (Tc = 25°C) PD 45 W Single pulse avalanche energy (Note 2) EAS 144 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ JEITA Channel temperature Tch 150 °C TOSHIBA Storage temperature range Tstg -55 to 150 °C Weight : 1.7 g (typ.) Drain current A 1: Gate 2: Drain 3: Source ⎯ JEDEC SC-67 2-10U1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Internal Connection Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.78 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. 1 Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2010-08-12

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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