PD - 94969B
IRF1405PbF
Typical Applications
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HEXFET® Power MOSFET
Industrial motor drive
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VDSS = 55V
Benefits
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
RDS(on) = 5.3mΩ
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ID = 169A
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Description
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This Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in
a wide variety of applications.
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TO-220AB
Absolute Maximum Ratings
Max.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
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e
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5.0
-55 to + 175
Parameter
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
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Thermal Resistance
RθJC
RθCS
RθJA
Units
h
h
169
118
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
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Typ.
Max.
Units
–––
0.50
–––
0.45
–––
62
°C/W
1
05/12/10
