< Silicon RF Power MOS FET (Discrete) >
RD00HHS1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
DESCRIPTION
OUTLINE DRAWING
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
4.4+/-0.1
TYPE NAME
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
3.9+/-0.3
LOT No.
0.8 MIN 2.5+/-0.1
FEATURES
1.5+/-0.1
1.6+/-0.1
1
0.
1
2
1.5+/-0.1
3
0.4 +0.03
-0.05
1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
APPLICATION
For output stage of high power amplifiers in HF Band
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
mobile radio sets.
RoHS COMPLIANT
RD00HHS1-101,T113
is a RoHS compliant products.
This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders (i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
(Tc=25°C UNLESS OTHERWISE NOTED)
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
Drain to source voltage
Vgs=0V
30
V
VGSS
Gate to source voltage
Vds=0V
10
V
Pch
Channel dissipation
Tc=25°C
3.1
W
Pin
Input power
Zg=Zl=50
10
mW
ID
Drain current
-
200
mA
Tch
Channel Temperature
-
150
°C
Tstg
Storage temperature
-
-40 to +125
°C
Rth j-c
Thermal resistance
40
°C/W
Junction to case
Note 1: Above parameters are guaranteed independently.
Publication Date : Oct．2011
1
