Si7812DN
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.037 at VGS = 10 V
16e
0.046 at VGS = 4.5 V
75
ID (A)
16e
Qg (Typ.)
8 nC
PowerPAK 1212-8
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
APPLICATIONS
S
3.30 mm
• Primary Side Switch
3.30 mm
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View
S
Ordering Information: Si7812DN-T1-E3 (Lead (Pb)-free)
Si7812DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
75
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
ID
Continuous Source-Drain Diode Current
IDM
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
TC = 70 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
25
A
16e
3.2a, b
IAS
15
11
mJ
52
PD
33
3.8a, b
W
2.4a, b
TA = 70 °C
Soldering Recommendations (Peak Temperature)c, d
7.2a, b
EAS
TC = 25 °C
Maximum Power Dissipation
16e
5.7a, b
TA = 70 °C
Pulsed Drain Current
V
16e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73332
S-83050-Rev. D, 29-Dec-08
www.vishay.com
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