STW15NB50
STH15NB50FI
®
N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH™ MOSFET
TYPE
V DSS
R DS(on)
ID
ST W15NB50
ST H15NB50FI
500 V
500 V
< 0.36 Ω
< 0.36 Ω
14.6 A
10.5 A
s
s
s
s
s
s
TYPICAL RDS(on) = 0.33 Ω
EXTREMELY HIGH dv/dt CAPABILITY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
2
1
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-247
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STW 15NB50
V DS
V DGR
V GS
Drain-source Voltage (V GS = 0)
500
V
Drain- gate Voltage (R GS = 20 kΩ)
Gate-source Voltage
500
V
± 30
o
ID
Drain Current (continuous) at Tc = 25 C
ID
Drain Current (continuous) at Tc = 100 C
IDM (•)
Uni t
ST H15NB50FI
o
10.5
A
9.2
6.6
A
dv/dt( 1 )
58.4
58.4
A
Total Dissipation at Tc = 25 C
190
80
W
Derating F actor
P t ot
Drain Current (pulsed)
V
14.6
0.64
1.52
W/ C
o
Peak Diode Recovery voltage slope
V ISO
Insulation Withstand Voltage (DC)
T stg
Storage T emperature
Tj
June 1998
Max. O perating Junction Temperature
4
4000
o
V/ ns
V
-65 to 150
o
C
150
o
C
1/9
