EMD2 / UMD2N / IMD2A
Transistors
General purpose
(dual digital transistors)
EMD2 / UMD2N / IMD2A
External dimensions (Units : mm)
(3)
0.22
(4)
(5)
(2)
(6)
0.5 0.5
1.0
1.6
EMD2
(1)
1.2
1.6
0.5
0.13
Features
1) Both the DTA124E chip and DTC124E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Each lead has same dimensions
ROHM : EMT6
2.0
1.3
(3)
(1)
1.25
0.65
(2)
(4)
(6)
(5)
0.2
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
0.65
Abbreviated symbol : D2
EMD2N
0.1Min.
The following characteristics apply to both the DTr1 and
DTr2, however, the “−” sign on DTr2 values for the PNP
type have been omitted.
0to0.1
0.9
0.7
0.15
2.1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D2
DTr2
DTr2
R2 R1
(4) (5)
(6)
(1)
(2)
R2=22kΩ
(1)
1.1
0.8
0.3to0.6
R1=22kΩ
R2 R1
(3) (2)
0.95 0.95
1.9
2.9
2.8
DTr1
0to0.1
R1=22kΩ
R2=22kΩ
1.6
(4) (5) (6)
R1 R2
DTr1
(3)
IMD2A
(3) (2) (1)
R1 R2
0.15
EMD2 / UMD2N
(4)
(5)
0.3
Equivalent circuit
(6)
IMD2A
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D2
Absolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
EMD2, UMD2N
Power
dissipation IMD2A
Symbol
Limits
Unit
VCC
50
V
VIN
40
−10
IO
30
IC (Max.)
100
Pd
150 (TOTAL)
V
mA
mW
300 (TOTAL)
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55∼+150
˚C
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗1
∗2