Si7850DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.022 at VGS = 10 V
10.3
0.031 at VGS = 4.5 V
60
ID (A)
8.7
PowerPAK SO-8
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFETs
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• PWM Optimized for Fast Switching
• 100 % Rg Tested
APPLICATIONS
S
6.15 mm
• Primary Side Switch for 24 V DC/DC Applications
• Secondary Synchronous Rectifier
5.15 mm
1
S
2
S
3
G
D
4
D
8
D
7
D
6
D
G
5
Bottom View
S
Ordering Information: Si7850DP-T1-E3 (Lead (Pb)-free)
Si7850DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
IS
IDM
IAS
EAS
Continuous Source Current
Pulsed Drain Current
Avalanche Currentb
Single Avalanche Energyb
Maximum Power Dissipation
ID
a
TA = 25 °C
TA = 85 °C
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
10 s
10.3
7.5
3.7
4.5
2.3
Steady State
60
± 20
6.2
4.5
1.5
40
15
11
1.8
0.9
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
22
58
2.6
Maximum
28
70
3.3
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Guaranteed by design, not subject to production testing.
Document Number: 71625
S09-0227-Rev. E, 09-Feb-09
www.vishay.com
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