NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
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HIGH DENSITY NAND FLASH MEMORIES
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Up to 32 Mbit spare area
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Up to 1 Gbit memory array
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Cost effective solutions for mass storage
applications
NAND INTERFACE
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Multiplexed Address/ Data
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Pinout compatibility for all densities
SUPPLY VOLTAGE
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1.8V device: VDD = 1.7 to 1.95V
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3.0V device: VDD = 2.7 to 3.6V
x8 device: (512 + 16 spare) Bytes
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x16 device: (256 + 8 spare) Words
x8 device: (16K + 512 spare) Bytes
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x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
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Page program time: 200µs (typ)
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STATUS REGISTER
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ELECTRONIC SIGNATURE
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DATA INTEGRITY
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100,000 Program/Erase cycles
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10 years Data Retention
RoHS COMPLIANCE
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Block erase time: 2ms (Typ)
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Program/Erase locked during Power
transitions
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Fast page copy without external buffering
FAST BLOCK ERASE
HARDWARE DATA PROTECTION
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COPY BACK PROGRAM MODE
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Sequential access: 50ns (min)
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VFBGA55 8 x 10 x 1mm
VFBGA63 9 x 11 x 1mm
Random access: 12µs (3V)/15us (1.8V)
(max)
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FBGA
BLOCK SIZE
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USOP48 12 x 17 x 0.65mm
PAGE SIZE
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TSOP48 12 x 20mm
x8 or x16 bus width
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Figure 1. Packages
CHIP ENABLE ‘DON’T CARE’
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Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
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Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
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Simple interface with microcontroller
Error Correction Code software and
hardware models
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Hardware simulation models
SERIAL NUMBER OPTION
August 2005
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