ISL9R3060G2, ISL9R3060P2
30 A, 600 V, STEALTHTM Diode
Description
Features
• Stealth Recovery trr = 36ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• SMPS
• Hard Switched PFC Boost Diode
The ISL9R3060G2, ISL9R3060P2 is a STEALTH™ diode optimized
for low loss performance in high frequency hard switched
applications. The STEALTH™ family exhibits low reverse recovery
current (Irr) and exceptionally soft recovery under typical operating
conditions. This device is intended for use as a free wheeling or
boost diode in power supplies and other power switching
applications. The low Irr and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing, expanding the
range of conditions under which the diode may be operated without
the use of additional snubber circuitry. Consider using the
STEALTH™ diode with an SMPS IGBT to provide the most efficient
and highest power density design at lower cost.
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Symbol
Package
CATHODE
(FLANGE)
JEDEC STYLE 2 LEAD TO-247-2L
JEDEC TO-220AC-2L
ANODE
K
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
A
CATHODE
ANODE
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM
VRWM
Parameter
Peak Repetitive Reverse Voltage
Ratings
600
Unit
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
30
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
70
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
325
A
Power Dissipation
200
W
Avalanche Energy (1A, 40mH)
20
mJ
VR
PD
EAVL
TJ, TSTG
TL
TPKG
Operating and Storage Temperature Range
-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
°C
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C1
1
www.fairchildsemi.com
ISL9R3060G2, ISL9R3060P2 — STEALTH™ Diode
November 2013
