New Products
MB85R1001/MB85R1002
1M-bit (×8/×16) FRAM
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MB85R1001/MB85R1002
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This products is a FRAM of 1M-bit 1T1C cell design, featuring high-density,
low-power consumption, and high-performance of write/read operation times.
Introduction
■ Operating Conditions
Supply voltage: ＋3.0V to ＋3.6V (No need for 12V or other
higher voltage)
Operating temperature range: −20℃ to ＋85℃
Read access time: 100ns
Read cycle time/Write cycle time: 250ns
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Non-volatile ferroelectric random access memory (FRAM)
features a high-speed read/write operation and low power
consumption and it is used not only as a single memory chip
but is also packaged with several other FRAM devices to
provide a microcomputer product. The total shipment of
FRAMs from FUJITSU has reached 160 million since the start
of their mass production. FUJITSU has now developed a new
series FRAM of 1T1C cell design that offers a density of 1M,
bit, the largest among FUJITSU s FRAM products.
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■ Circuit Functions
ECC (Error Correcting Code) circuit
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/LB and /UB data byte ￣
control (MB85R1002)
Power-on protect function
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■ Package
48-pin TSOP package
48-pin FBGA package (MB85R1002)
Product Features
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■ Chip Configuration
MB85R1001: 128K words×8-bit configuration
MB85R1002: 64K words×16-bit configuration
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Photo 1 External View
18
FIND Vol.22
No.4
2004
Photo 2 Chip
