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2SD1717
Inchange Semiconductor Product Specification 2SD1717 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 160 V VCEO Collector-emitter voltage Open base 160 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 20 A PC Collector power dissipation 3.5 W TC=25℃ 120 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
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