Phototransistors
PNA1801L (PN168)
Silicon planar type
Unit: mm
For optical control systems
5.0±0.2
15.0±1.0
• High sensitivity
• Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
• Small size, high output power, low cost
• φ3 shell type plastic package
4.5±0.3
■ Features
0.6±0.2
φ3.0±0.2
Not soldered 2.0 max.
φ3.8±0.2
2-0.8 max.
1.0
2-0.5±0.1
0.5±0.1
■ Absolute Maximum Ratings Ta = 25°C
Rating
Unit
Collector-emitter voltage (Base open)
VCEO
30
V
Emitter-collector voltage (Base open)
VECO
5
V
Collector current
IC
20
mA
Collector power dissipation *
PC
100
mW
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
(1.5)
Symbol
°C
1.7
Parameter
2.54
2
1
1: Emitter
2: Collector
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Photocurrent *1, *2
ICE(L)
Dark current
Min
Typ
Max
Unit
0.8
VCE = 10 V, L = 500 lx
3.0
9.6
mA
500
ICEO
VCE = 10 V
5
Peak emission wavelength
λp
VCE = 10 V
800
nm
Half-power angle
θ
The angle from which photocurrent
becomes 50%
30
°
Rise time *3
tr
VCC = 10 V, ICE(L) = 1 mA, RL = 100 Ω
4
µs
Fall time *3
tf
4
µs
Collector-emitter saturation voltage
*1
VCE(sat)
ICE(L) = 1 mA, L = 1 000 lx
0.2
0.5
nA
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. *1: Source: Tungsten (color temperature 2 856 K)
*2: Rank classification
Rank
Q
R
S
ICE(L) (mA)
0.8 to 2.4
1.6 to 4.8
3.2 to 9.6
*3: Switching time measurement circuit
Sig. in
VCC
(Input pulse)
50 Ω
Sig. out
RL
90%
10%
(Output pulse)
tr
tr: Rise time
tf: Fall time
tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2007
SHE00004CED
1
