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2SK2599-TP

製品説明
仕様・特性

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) High forward transfer admittance Low leakage current : |Yfs| = 1.7 S (typ.) : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V (Note 1) ID 2 A Pulse (t = 1 ms) (Note 1) IDP 5 DC Drain current Pulse (t = 100 μs) (Note 1) A JEDEC A IDP 12 Drain power dissipation PD 1.3 Single pulse avalanche energy (Note 2) EAS 112 Avalanche current IAR 2 EAR 0.13 Tch 150 °C Storage temperature range Tstg −55 to 150 ― mJ Channel temperature JEITA A Repetitive avalanche energy (Note 3) ― °C W TOSHIBA 2-8M1B mJ Weight: 0.54 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Max Unit Rth (ch−a) 96.1 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 48.4 mH, RG = 25 Ω, IAR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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