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NTD2955-1G

製品説明
仕様・特性

NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. www.onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V 155 mW @ −10 V, 6 A −12 A D Features • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Designed for Low−Voltage, High−Speed Switching Applications and P−Channel G to Withstand High Energy in the Avalanche and Commutation Modes • NVD and SVD Prefix for Automotive and Other Applications 4 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) 1 1 2 Symbol Value Unit 3 Drain−to−Source Voltage VDSS −60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 25 Vdc Vpk DPAK CASE 369C STYLE 2 ID IDM −12 −18 Adc Apk Rating Drain Current Dr− Continuous @ Ta = 25°C Dr− Single Pulse (tp ≤ 10 ms) PD 55 TJ, Tstg −55 to 175 °C EAS 216 mJ MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain W Operating and Storage Temperature Range 3 IPAK CASE 369D STYLE 2 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds AYWW NT 2955G Total Power Dissipation @ Ta = 25°C 2 AYWW NT 2955G • S Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 2 1 3 Drain Gate Source RqJC RqJA RqJA 2.73 71.4 100 °C/W TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2). A NT2955/NV2955 NT2955 Y WW G 1 2 3 Gate Drain Source = Assembly Location* = Specific Device Code (DPAK) = Specific Device Code (IPAK) = Year = Work Week = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2017 March, 2017 − Rev. 16 1 Publication Order Number: NTD2955/D

ブランド

ONS

会社名

ON Semiconductor

本社国名

U.S.A

事業概要

自動車、通信、コンピュータ、コンシューマ、工業、LED照明、医療、軍事/航空および電源アプリケーション向けの電源および信号管理、ロジック、ディスクリートおよびカスタム・デバイスを含む半導体のサプライヤー。

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