PD - 96280
IRF6711SPbF
IRF6711STRPbF
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHS Compliant and Halogen Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for Control FET Application
Compatible with existing Surface Mount Techniques
100% Rg tested
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 3.0mΩ @ 10V 5.2mΩ @ 4.5V
Qg
13nC
Qgd
Qgs2
Qrr
Qoss
Vgs(th)
4.4nC
tot
1.8nC
21nC
9.5nC
1.8V
DirectFET ISOMETRIC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6711STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6711STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Max.
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
g
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
Ãg
Typical RDS(on) (mΩ)
ID = 15A
10
TJ = 125°C
5
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
e
e
f
h
15
Units
25
±20
19
15
84
150
62
15
VGS, Gate-to-Source Voltage (V)
VDS
V
A
mJ
A
14.0
ID= 15A
12.0
VDS= 20V
VDS= 13V
10.0
8.0
6.0
4.0
2.0
0.0
0
5
10
15
20
25
30
35
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.54mH, RG = 25Ω, IAS = 15A.
1
11/11/09