SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR
SILICON PLANAR TYPE
SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A
AC POWER CONTROL APPLICATIONS
Unit: mm
Repetitive Peak off−State Voltage
: VDRM = 400V, 600V
R.M.S On−State Current
: IT (RMS) = 12A
High Commutating (dv / dt)
Isolation Voltage
: VIsol = 1500V AC
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SM12GZ47
SM12GZ47A
SM12JZ47
SM12JZ47A
SYMBOL
V
600
IT (RMS)
Peak One Cylce Surge On−State
Current (Non−Repetitive)
ITSM
2
UNIT
400
VDRM
R. M. S. On−state Current
(Full Sine Waveform TC = 72°C)
I t Limit Value
RATING
2
12
120 (50Hz)
132 (60Hz)
A
A
2
I t
72
A s
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
50
A / μs
Peak Gate Power Dissipation
PGM
5
W
PG (AV)
0.5
VFGM
10
IGM
2
−40~125
°C
Storage Temperature Range
Tstg
−40~125
°C
Isolation Voltage (AC, t = 1min.)
VIsol
1500
―
A
Tj
JEITA
V
Peak Gate Current
―
W
Peak Gate Voltage
JEDEC
V
Average Gate Power Dissipation
Junction Temperature
TOSHIBA
13-10H1A
Weight: 1.7 g (typ.)
Note 1: di / dt test condition
VDRM = 0.5 × Rated
ITM ≤ 17A
tgw ≥ 10μs
tgr ≤ 250ns
igp = IGT × 2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-10-30
