SSM3J09FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J09FU
Management Switch
High Speed Switching Applications
Unit: mm
•
Small package
•
Low on resistance: Ron = 2.7 Ω (max) (@VGS = −10 V)
: Ron = 4.2 Ω (max) (@VGS = −4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−30
V
Gate-Source voltage
VGSS
±20
V
DC
ID
−200
Pulse
IDP
−400
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55~150
°C
Drain current
Drain power dissipation (Ta = 25°C)
Note:
mA
JEDEC
―
JEITA
SC-70
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2E1E
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm × 3) Figure 1.
Marking
Figure 1: 25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.6 mm2 × 3
Equivalent Circuit
(top view)
3
3
0.6 mm
1.0 mm
DK
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01